Soctera co-founders at upcoming conferences to present AlN device developments
Updated: Jun 1, 2021
Soctera co-founders and Cornell PhD candidates Reet and Austin will be highlighting their latest academic research results on the AlN platform in upcoming conferences. Check them out (or reach out us) to stay up-date-date with the rapid developments in both n-channel and p-channel devices on the AlN platform.
"AlN/GaN/AlN HEMTs with in-situ crystalline AlN Passivation for Reduced RF Dispersion" to be presented by Reet Chaudhuri at Compound Semiconductor Week '21 (May 9-13, 2021)
"Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz and beyond" to be presented by Austin Hickman at Device Research Conference 2021, June 20-23 2021.
"E-Mode AlN/GaN/AlN MOS-HFETs with 3 nm GaN Quantum Well Channels" to be presented by Reet Chaudhuri at Device Research Conference 2021, Session 7, June 22 2021.
"GHz-speed GaN/AlN p-channel MIS-HFETs with Imax of 0.5 A/mm" to be presented by Reet Chaudhuri at Device Research Conference 2021, Session 9, June 23 2021.