Soctera, Inc. has been awarded $750,000 as one of seven winners in the DBX Microelectronics Challenge! This recognition validates Soctera’s innovative AlN/GaN HEMT technology and is a testament to its commercial viability.
The momentum built through dedicated R&D and partnerships with crucial materials and device fabrication suppliers has given Soctera line-of-sight to production readiness for its power amplifier product. This PA will give radar and telecommunications applications 5x the thermal performance while utilizing only 5% of the gallium. This milestone marks the commencement of an exciting new phase of growth.